1 - 4 ? 2000 ixys all rights reserved symbol test conditions maximum ratings ixfk ixfn ixfn 90N20 100n20 106n20 v dss t j = 25 c to 150 c 200 200 200 v v dgr t j = 25 c to 150 c; r gs = 1 m 200 200 200 v v gs continuous 20 20 20 v v gsm transient 30 30 20 v i d25 t c = 25 c, chip capability 90 100 106 a i d80 t c = 80 c, limited by external leads 76 - a i dm t c = 25 c, pulse width limited by t jm 360 400 424 a i ar t c = 25 c5050a e ar t c = 25 c 30 30 30 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 5 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 500 520 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 - c v isol 50/60 hz, rms t = 1 min - 2500 v~ i isol 1 ma t = 1 s - 3000 v~ m d mounting torque 0.9/6 1.5/13 nm/lb.in. terminal connection torque - 1.5/13 nm/lb.in. weight 10 30 g hiperfet tm power mosfets n-channel enhancement mode avalanche rated, high dv/dt, low t rr features l international standard packages jedec to-264 aa, epoxy meet ul 94 v-0, flammability classification minibloc with aluminium nitride isolation low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated low package inductance fast intrinsic rectifier applications dc-dc converters synchronous rectification battery chargers switched-mode and resonant-mode power supplies dc choppers temperature and lighting controls low voltage relays advantages easy to mount space savings high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 200 v v gh(th) v ds = v gs , i d = 8 ma 2 4 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = 0.8 ? v dss t j = 25 c 400 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 i d25 pulse test, t 300 s, ixfk90N20 0.023 duty cycle d 2 % ixfn100n20 0.023 ixfn106n20 0.020 to-264 aa (ixfk) s g d d s g s g = gate d = drain s = source tab = drain either source terminal at minibloc can be used as main or kelvin source s g s d 92804h (7/97) minibloc, sot-227 b (ixfn) e153432 (tab) v dss i d25 r ds(on) ixfk 90 n 20 200 v 90 a 23 m ixfn 100 n 20 200 v 100 a 23 m ixfn 106 n 20 200 v 106 a 20 m t rr 200 ns to-264 aa ixys reserves the right to change limits, test conditions, and dimensions.
2 - 4 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 60 s c iss 9000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1600 pf c rss 590 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 80 ns t d(off) r g = 1 (external), 75 ns t f 30 ns q g(on) 380 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 70 nc q gd 190 nc r thjc to-264 aa 0.25 k/w r thck to-264 aa 0.15 k/w r thjc minibloc, sot-227 b 0.24 k/w r thck minibloc, sot-227 b 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v ixfk90N20 90 a ixfn100n20 100 a ixfn106n20 106 a ixfk90N20 i sm repetitive; ixfn100n20 360 a pulse width limited by t jm ixfn106n20 424 a v sd i f = 100 a, v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 200 ns q rm i f = 50 a, -di/dt = 100 a/ s, v r = 100 v 3 c i rm 38 a millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-264 aa outline m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 minibloc, sot-227 b ixfk100n20 ixfn90N20 ixfn106n20 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4 ? 2000 ixys all rights reserved ixfk100n20 ixfn90N20 ixfn106n20 fig. 1 output characteristics fig. 2 input admittance fig. 5 drain current vs. fig. 6 temperature dependence of case temperature breakdown and threshold voltage fig. 3 r ds(on) vs. drain current fig. 4 temperature dependence of drain to source resistance t j - degrees c -50 -25 0 25 50 75 100 125 150 bv/v g(th) - normalized 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 20 40 60 80 100 120 t j - degrees c -50 -25 0 25 50 75 100 125 150 r ds(on) - normalized 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i d = 53a i d - amperes 0 50 100 150 200 250 300 350 r ds(on) - normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 v gs - volts 012345678910 i d - amperes 0 20 40 60 80 100 120 140 160 180 200 v ds - volts 012345678910 i d - amperes 0 20 40 60 80 100 120 140 160 180 200 6v 5v v gs = 15v v gs = 10v v gs = 10v bv dss v gs(th) 9v 8v 7v t j = 25 c t j = 25 c t j = 25 c 106n20 90N20
4 - 4 ? 2000 ixys all rights reserved fig.10 transient thermal impedance t j = 25 c v sd - volts 0.4 0.6 0.8 1.0 1.2 i d - amperes 0 20 40 60 80 100 pulse width - seconds 0.001 0.01 0.1 1 thermal response - k/w 0.01 0.1 v ds - volts 0 5 10 15 20 25 capacitance - pf 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 c rss c oss c iss gate charge - ncoulombs 0 50 100 150 200 250 300 350 400 v ge - volts 0 2 4 6 8 10 12 14 v ds = 100v i d = 50a i g = 10ma f = 1mhz v ds = 25v t j = 125 c 0.5 fig.7 gate charge characteristic curve fig.8 capacitance curves fig.9 source current vs. source to drain voltage ixfk100n20 ixfn90N20 ixfn106n20
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